A 64GHz 6.5 dB NF 15.5 dB gain LNA in 90nm CMOS

Abstract

This paper presents an integrated LNA for mm-wave applications implemented in 90 nm CMOS technology. Modeling methodology based solely on electromagnetic simulations, RC parasitic extraction and device measurements up to 20 GHz allows for "correct-by-construction" design at mm-wave frequency and first-pass silicon success. The dual-stage cascode LNA has a peak gain of 15.5 dB at 64 GHz with an NF of 6.5 dB, while drawing 26 mA per stage from 1.65 V. Output P1dB is 3.8 dBm. At VDD = 1.26 V, each stage draws 19 mA, with a peak gain and a NF of 13.5 dB and 6.7 dB respectively. To the authors' knowledge, this is the lowest measured NF at mm-wave frequencies reported so far in CMOS. Measured results are in excellent agreement with simulations. A custom set-up for mm- wave NF measurement is also extensively described in the paper.