Modeling nanoscale MOSFETs by a neural network approach

Abstract

This paper presents modeling nanometer MOSFETs by a neural network approach. The principle of this approach is firstly introduced and its application in modeling DC and conductance characteristics of nano-MOSFET is demonstrated in details. It is shown that this approach does not need parameter extraction routine while its prediction of the transistor performance has a small relative error within 1% compared with measure data, thus its result is as accurate as that BSIM model.