W. Chakraborty, Uma Sharma, S. Datta, S. Mahapatra
{"title":"Hot Carrier Degradation in Cryo-CMOS","authors":"W. Chakraborty, Uma Sharma, S. Datta, S. Mahapatra","doi":"10.1109/IRPS45951.2020.9129312","DOIUrl":null,"url":null,"abstract":"28nm Gate First High-K Metal Gate (GF-HKMG) technology is analyzed for Hot-Carrier Degradation (HCD) under varying gate/drain (V<inf>G</inf>/V<inf>D</inf>) bias and temperature (T: 300K to 77K). A compact model is used to partition measured threshold voltage shift (ΔV<inf>T</inf>) into interface trap generation due to pure HCD (ΔV<inf>IT-HC</inf>), Bias Temperature Instability (BTI, ΔV<inf>IT-BT</inf>), and electron/hole trapping (ΔV<inf>ET</inf>/ΔV<inf>HT</inf>) subcomponents. The relative importance of the subcomponents is analyzed for varying T. Although pure HCD dominates under Cryo-CMOS operation, the T dependence is shown to be different for Si NMOS and SiGe PMOS FETs. Finally, the impact on the circuit (RO: Ring Oscillator) operation is analyzed.","PeriodicalId":116002,"journal":{"name":"2020 IEEE International Reliability Physics Symposium (IRPS)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS45951.2020.9129312","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
28nm Gate First High-K Metal Gate (GF-HKMG) technology is analyzed for Hot-Carrier Degradation (HCD) under varying gate/drain (VG/VD) bias and temperature (T: 300K to 77K). A compact model is used to partition measured threshold voltage shift (ΔVT) into interface trap generation due to pure HCD (ΔVIT-HC), Bias Temperature Instability (BTI, ΔVIT-BT), and electron/hole trapping (ΔVET/ΔVHT) subcomponents. The relative importance of the subcomponents is analyzed for varying T. Although pure HCD dominates under Cryo-CMOS operation, the T dependence is shown to be different for Si NMOS and SiGe PMOS FETs. Finally, the impact on the circuit (RO: Ring Oscillator) operation is analyzed.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
