300-GHz 120-Gb/s Wireless Transceiver with High-Output-Power and High-Gain Power Amplifier Based on 80-nm InP-HEMT Technology

2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2019-11-01 DOI:10.1109/BCICTS45179.2019.8972756

H. Hamada, T. Tsutsumi, G. Itami, H. Sugiyama, H. Matsuzaki, K. Okada, H. Nosaka

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引用次数: 21

Abstract

A 300-GHz wireless transceiver (TRx) with a record data rate of 120 Gb/s was developed using an InP-based high-electron-mobility-transistors (InP-HEMTs). The power amplifier (PA), which is the key component of our TRx, was designed and fabricated to have high output power and gain with a combination of two- and 4-finger HEMTs and a low-impedance inter-stage matching technique. The measured small signal gain of the PA module was larger than 15 dB from 274 to 303 GHz. The saturated output power and output power at 1-dB gain compression point were 12 and 6 dBm, respectively. Using this PA and a 300-GHz fundamental mixer, we constructed our 300-GHz TRx. Wireless data transmissions of the TRx with a link distance of 9.8 m were carried out. Data transmissions of 120 and 100.2 Gb/s were successfully demonstrated for 16QAM and 64QAM, respectively. To the best of our knowledge, these are the highest data rates achieved with an electronics-based TRx around 300 GHz.

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基于80nm InP-HEMT技术的300-GHz 120gb /s高输出功率高增益无线收发器

采用基于inp的高电子迁移率晶体管(inp - hemt)开发了一种记录数据速率为120 Gb/s的300 ghz无线收发器(TRx)。功率放大器(PA)是TRx的关键部件，其设计和制造具有高输出功率和增益，结合了两指和四指hemt以及低阻抗级间匹配技术。在274 ~ 303 GHz范围内，PA模块的小信号增益均大于15 dB。饱和输出功率和1 db增益压缩点的输出功率分别为12和6 dBm。使用这个扩音器和一个300 ghz的基频混频器，我们构建了300 ghz的TRx。TRx进行了链路距离为9.8 m的无线数据传输。在16QAM和64QAM下，数据传输速度分别为120和100.2 Gb/s。据我们所知，这是基于电子的TRx在300 GHz左右实现的最高数据速率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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