Dicing technology in super-thin wafer for IC

Abstract

A slice of silicon less than 200 /spl mu/m in thickness is needed for IC card wafers. Dicing the wafer with a grinding wheel is the universal method for many IC assembly plants, but hidden cracks on chips, bringing quality problems, often occur during the dicing process. This article gives intensive analysis and research from dicing theory and cracking causation to process improvement, at the same time it gives effective ways to solve the problem of chip cracking by choosing an appropriate dicing blade and using the new dicing technique of grooving.