Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration

Abstract

We have successfully fabricated chip-level integrated nMISFETs with sputtered molybdenum disulfide (MoS2) thin channel using sulfur-powder annealing (SPA) and molybdenum disilicide (MoSi2) contact which show n-type-normally-off operation in accumulation. SPA intentionally compensated sulfur vacancies of sputtered MoS2 film. Eventually, we achieved a normally-off operation, which realizes industrial chip-level LSIs with MoS2 channel.