High-electron-mobility In0.53Ga0.47As/In0.8Ga0.2As composite-channel modulation-doped structures grown by metal-organic vapor-phase epitaxy

Abstract

Metal-organic vapor-phase epitaxy (MOVPE) growth of In-rich InxGa1−xAs on InP was investigated as a way to obtain extremely high electron mobility in modulation-doped (MD) structures. High-quality In0.53Ga0.47As/In0.8Ga0.2As composite-channel (CC) MD structures were successfully grown without significant lowering of growth temperature. The room-temperature electron mobility in the CC MD reached 150,000 cm²/Vs at the sheet carrier concentration (Ns) of 2.1×10¹² cm⁻², which is one of the highest ever reported in MOVPE-grown InP-based InGaAs/InAlAs MD structures.