Theoretical modeling for carrier diffusion coefficient of one-dimensional Si wires around room temperature

Abstract

This paper uses the semi-microscopic theory to elucidate the effective diffusion coefficient of carriers in one-dimensional Si wire devices. The theoretical model assumes that the primary spectrum of the diffusion process of majority and minority carriers rules the diffusion process; a statistical assessment of the diffusion coefficient is performed based on quantum-mechanical analysis. The theory reveals that the diffusion coefficient drastically decreases as the cross-sectional area falls under the sub-10-nm range.