Electrical Characterizations Based on AFM: SCM and SSRM Measurements with a Multidimensional Approach

R. Coq Germanicus, U. Lüders
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Abstract

This article demonstrates the value of atomic force microscopes, particularly the different electrical modes, for characterizing complex microelectronic structures. It presents experimental results obtained from deep trench isolation (DTI) structures using SCM and SSRM analysis with emphasis on the voltage applied by the AFM. From these measurements, a failure analysis workflow is proposed that facilitates AFM voltage optimization to reveal the structure of cross-sectioned samples, make comparisons, and determine the underlying cause of failures.
基于AFM的电特性分析:基于多维方法的SCM和SSRM测量
本文论证了原子力显微镜的价值,特别是不同的电模式,以表征复杂的微电子结构。本文介绍了用SCM和SSRM分析得到的深沟槽隔离(DTI)结构的实验结果,重点讨论了AFM施加的电压。根据这些测量,提出了一个失效分析工作流,有助于AFM电压优化,以揭示横截面样品的结构,进行比较,并确定失效的根本原因。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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