Design of 3C-SiC symmetric and asymmetric double gate MOSFET

Abstract

The superior material properties such as higher breakdown field, thermal conductivity and wider bandgap make Silicon Carbide (SiC) appropriate for transistor applications. However, there are certain parameters where SiC have yet to achieve required performance levels. SiC have number of polytypes having mature technology. Being one of the SiC polytypes, 3C-SiC has higher mobility and saturation velocity. This paper presents symmetric 3C-SiC Double Gate MOSFET (DG MOSFET) and asymmetric 3C-SiC DG MOSFET. The two designs were simulated for different applied voltage at various lengths. From simulated results it can be seen that asymmetric 3C-SiC DG MOSFET shows increment in on-current values and decrement in off-current values for 22 nm, 40 nm and 60 nm channel length.