Simulations of a high power 4H-SiC VJFET and its GaAs counterpart

Abstract

In this paper, the 2D simulator ATLAS is used to investigate and compare the voltage blocking capability, the current rating and the switching characteristics of VJFET's based on SiC and GaAs materials. As a part of this study, simulations and analysis of a normally-off 4H-SiC VJFET with 8 kV blocking voltage are presented, along with similar results for its GaAs counterpart. This structure is optimized to achieve a high blocking voltage and a high current density. The goal of this work is to compare the performance of a SiC VJFET with that of a similar GaAs VJFET, and to provide guidelines for pulsed power applications.