Metallurgy and stability of the Sn/Cu interface for lead-free flip chip application

R. Shih, D. Lau, R. Kwok
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引用次数: 4

Abstract

Eutectic tin copper and pure tin are two possible candidates to replace tin lead alloy as the solder bump materials for the flip-chip process. Without lead, the stability of the Sn/Cu interface during reflow suffers from the rapid dissolution of copper into molten tin. The requirements of multiple reflow during the flip-chip manufacturing steps further complicate the issue. This study aims to better understand the metallurgy and stability of the bump/copper substrate interface and compares the results to a Sn/Ni interface. A tin-copper bump with 0.7-1 wt% of copper and pure tin bumps were electroplated using a fountain plating machine on silicon wafers with copper and nickel as the under bump metal. The samples were pre-annealed at various temperatures and multiple reflows were performed using a 5-zones reflow-oven. The cross-sections of the interfaces were studied by scanning electron microscopy and scanning Auger microscopy. It was found that copper dissolution into the eutectic tin copper and pure tin solders during the reflow process resulted in the formation of Cu/sub 6/Sn/sub 5/ intermetallic at the interface. The ball shear test result suggests that the presence of the intermetallic at the interface did not adversely affect the bonding strength of the bump/copper interface. In this study, we developed a pre-annealing process to control the intermetallic region that can significantly slow down the copper dissolution during reflow.
无铅倒装芯片中Sn/Cu界面的冶金学和稳定性
共晶锡铜和纯锡是两种可能取代锡铅合金作为倒装工艺焊料凹凸材料的候选材料。在没有铅的情况下,回流过程中Sn/Cu界面的稳定性受到铜在熔融锡中的快速溶解的影响。在倒装芯片制造过程中,多次回流的要求使问题进一步复杂化。本研究旨在更好地了解bump/copper衬底界面的冶金和稳定性,并将结果与Sn/Ni界面进行比较。用喷镀机在以铜和镍为下凸金属的硅片上电镀含铜0.7 ~ 1 wt%的锡铜凸块和纯锡凸块。样品在不同温度下进行预退火,并使用五区回流炉进行多次回流。采用扫描电镜和扫描俄歇显微镜对界面截面进行了研究。结果表明,在回流过程中,铜在共晶锡铜和纯锡钎料中溶解,在界面处形成Cu/sub 6/Sn/sub 5/金属间化合物。球剪试验结果表明,界面处金属间化合物的存在并未对凹凸/铜界面的结合强度产生不利影响。在本研究中,我们开发了一种预退火工艺来控制金属间区,可以显著减缓回流过程中铜的溶解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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