Electrical characterization of undoped diamond films for RF MEMS application

L. Michalas, M. Koutsoureli, E. Papandreou, G. Papaioannou, S. Saada, C. Mer, R. Hugon, P. Bergonzo, A. Leuliet, P. Martins, S. Bansropun, A. Ziaei
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引用次数: 10

Abstract

Diamond films are considered as superior dielectric in comparison to Si3N4 for MEMS applications. The present paper provides a detail characterization study of electrical properties of undoped microcrystalline diamond films involving dc and charge/discharge transient analysis over a wide temperature range. The aim of the study is to provide a better insight on the physical mechanisms responsible for the charge injection and collection processes under different operation conditions applicable to MEMS capacitive switches.
用于射频MEMS的未掺杂金刚石薄膜的电学特性
在MEMS应用中,金刚石薄膜被认为是优于Si3N4的介质。本文对未掺杂微晶金刚石薄膜的电学特性进行了详细的表征研究,包括在宽温度范围内的直流和充放电瞬态分析。该研究的目的是更好地了解MEMS电容开关在不同操作条件下电荷注入和收集过程的物理机制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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