L. Michalas, M. Koutsoureli, E. Papandreou, G. Papaioannou, S. Saada, C. Mer, R. Hugon, P. Bergonzo, A. Leuliet, P. Martins, S. Bansropun, A. Ziaei
{"title":"Electrical characterization of undoped diamond films for RF MEMS application","authors":"L. Michalas, M. Koutsoureli, E. Papandreou, G. Papaioannou, S. Saada, C. Mer, R. Hugon, P. Bergonzo, A. Leuliet, P. Martins, S. Bansropun, A. Ziaei","doi":"10.1109/IRPS.2013.6532049","DOIUrl":null,"url":null,"abstract":"Diamond films are considered as superior dielectric in comparison to Si3N4 for MEMS applications. The present paper provides a detail characterization study of electrical properties of undoped microcrystalline diamond films involving dc and charge/discharge transient analysis over a wide temperature range. The aim of the study is to provide a better insight on the physical mechanisms responsible for the charge injection and collection processes under different operation conditions applicable to MEMS capacitive switches.","PeriodicalId":138206,"journal":{"name":"2013 IEEE International Reliability Physics Symposium (IRPS)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2013.6532049","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
Diamond films are considered as superior dielectric in comparison to Si3N4 for MEMS applications. The present paper provides a detail characterization study of electrical properties of undoped microcrystalline diamond films involving dc and charge/discharge transient analysis over a wide temperature range. The aim of the study is to provide a better insight on the physical mechanisms responsible for the charge injection and collection processes under different operation conditions applicable to MEMS capacitive switches.