Characterizations of double-gate SBTT studying by a 2-D full-band Monte Carlo device simulator

The Fourth International Workshop on Junction Technology, 2004. IWJT '04. Pub Date : 2004-03-15 DOI:10.1109/IWJT.2004.1306871

G. Du, Xiaoyan Liu, Meng Liu, Lei Sun, R. Han

引用次数: 1

Abstract

A double-gate Schottky barrier tunneling transistor (DGSBTT) structure is investigated by a 2-D full-band Monte Carlo device simulator. A Schottky barrier contact model including tunneling effect and Schottky effect has been implemented in this simulator. The result shows that DGSBTF has a big performance improvement compare to single gate SBTT, its Ion/Ioff is more than 10/sup 5/ at Vds= 1.0 V.

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用二维全波段蒙特卡罗器件模拟器研究双栅SBTT的特性

利用二维全频带蒙特卡罗器件模拟器研究了双栅肖特基势垒隧道晶体管(DGSBTT)结构。在该仿真器中实现了包含隧道效应和肖特基效应的肖特基势垒接触模型。结果表明，与单栅极SBTT相比，DGSBTF的性能有很大的提高，在Vds= 1.0 V时，其离子/断差大于10/sup 5/。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

The Fourth International Workshop on Junction Technology, 2004. IWJT '04.

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