S. Alam, D. Houssameddine, F. Neumeyer, I. Rahman, M. Deherrera, S. Ikegawa, P. Sanchez, X. Zhang, Y. Wang, J. Williams, D. Gogl, H. Xu, M. Farook, D. Aceves, H. K. Lee, F. Mancoff, M. Chou, C. Tan, B. Huang, S. Mukherjee, M. Lu, A. Shah, K. Nagel, Y. Kim, S. Aggarwal
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引用次数: 4
Abstract
We present the new generation of Everspin's STT-MRAM device with extended Serial Peripheral Interface (xSPI). The device is capable of persistent memory operation with random reads and writes while supporting page-buffered program and optional erase for compatibility with Serial NOR Flash protocol. MRAM technology has been optimized for the needed improvements to enable low-latency industrial applications. Two bank architecture with a new write scheme is employed for fast write providing up to 4 orders of magnitude write energy improvement over traditional NOR. We demonstrate full 64Mb die high-speed functionality with symmetric read and write throughput of up to 400MB/s.
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