Hot electron stress effect on dual-band power amplifier and integrated mixer-lna design for reliability

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2009-07-06 DOI:10.1109/IPFA.2009.5232674

J. Yuan, J. Ma, C. Hsu, W. Yeh

引用次数: 1

Abstract

Channel hot-electron degradations on strained MOSFETs are examined experimentally. The stressed model parameters are used in SpectreRF simulation to investigate the impact of stress time on dual-band power amplifier and mixer-LNA performances. Electrical stress decreases power-added efficiency of dual-band PA and increases noise figure of integrated mixer-low noise amplifier.

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热电子应力对双频功率放大器和集成混频器-lna设计可靠性的影响

实验研究了应变mosfet的通道热电子退化。利用应力模型参数在SpectreRF仿真中研究了应力时间对双频功率放大器和混频器- lna性能的影响。电应力降低了双频扩音器的加电效率，增加了混频器-低噪声集成放大器的噪声系数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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