Design of a voltage reference circuit based on subthreshold and triode MOSFETs in 90nm CMOS

Abstract

This work presents a new design of a precision voltage reference circuit using MOSFET transistor devices operating in the subthreshold region. Also, a triode region MOSFET has been deployed instead of using resistors. The circuit has been designed and simulated in 90 nm CMOS technology. A reference voltage of 281 mV is obtained with Line Sensitivity, LS, of 0.23% in a supply voltage range of (0.8 V-1.65 V). The Temperature Coefficient, TC, is 125 ppm/°C through a temperature range of (0-85) °C The Power Supply Rejection Ratio (PSRR) is -48 dB at 50 Hz and -26 dB at 1 MHz. Finally, the power consumption is 11.31 μW and the coefficient of process variations is 0.29%. The design has been simulated using Synopsys Custom Designer and HSPICE CAD tools.