Record performance for junctionless transistors in InGaAs MOSFETs

Abstract

We demonstrate junctionless tri-gate MOSFETs utilizing a single layer 7 nm thick In0.80Ga0.20As (ND ∼ 1×10¹⁹ cm⁻³) as both channel and contacts. Devices with source and drain metal separation of 32 nm and Lg of 25 nm exhibit SS = 76 mV/dec., both the highest reported gm = 1.6 mS/μΑ and Ion = 160 μA/μm (VDD = 0.5 V, IOFF = 100 nA/μm) for a junctionless transistor. We also examine the influence of the contact thickness, comparing double-layer junctionless devices with 37 nm thick contacts with single-layer 7 nm contact devices.