A complete and consistent electrical/thermal HBT model

Abstract

GaAs heterojunction bipolar transistor (HBT) circuits with significant self-heating must be analyzed using coupled electrical and thermal simulation. The author presents a complete, consistent, coupled electrical/thermal model for such devices. The model is applicable to DC, AC, transient large-signal steady-state, noise and stability analyses. Examples of the effects of self-heating on device performance are given. The coupled model is necessary to model GaAs HBT behavior properly when devices are biased at high power dissipation.<>