J. Nam, Young-Deuk Jeon, Young‐Kyun Cho, Sang-Gug Lee, Jong-Kee Kwon
{"title":"A 2.85mW 0.12mm2 1.0V 11-bit 20-MS/s algorithmic ADC in 65nm CMOS","authors":"J. Nam, Young-Deuk Jeon, Young‐Kyun Cho, Sang-Gug Lee, Jong-Kee Kwon","doi":"10.1109/ESSCIRC.2009.5325946","DOIUrl":null,"url":null,"abstract":"An 11-bit 20-MS/s algorithmic analog-to-digital converter (ADC) based on a dynamic biasing technique is proposed. A dynamic biasing technique is employed to an operational transconductance amplifier (OTA) for power reduction in sub-conversion stages. Besides, a distinct sampling clock scheme is taken to pre-amplifier for reducing aperture time errors. The prototype ADC is fabricated in a 65nm 1P6M CMOS process and features a maximum signal-to-noise-ratio and a spurious-free-dynamic-range of 60.4dB, and 69.2dB at Nyquist input frequency with 20MS/s from a 1.0V supply, respectively. About 22% of OTA power dissipation is reduced without performance degradation and totally 2.85mW is consumed.","PeriodicalId":258889,"journal":{"name":"2009 Proceedings of ESSCIRC","volume":"2673 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 Proceedings of ESSCIRC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2009.5325946","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
An 11-bit 20-MS/s algorithmic analog-to-digital converter (ADC) based on a dynamic biasing technique is proposed. A dynamic biasing technique is employed to an operational transconductance amplifier (OTA) for power reduction in sub-conversion stages. Besides, a distinct sampling clock scheme is taken to pre-amplifier for reducing aperture time errors. The prototype ADC is fabricated in a 65nm 1P6M CMOS process and features a maximum signal-to-noise-ratio and a spurious-free-dynamic-range of 60.4dB, and 69.2dB at Nyquist input frequency with 20MS/s from a 1.0V supply, respectively. About 22% of OTA power dissipation is reduced without performance degradation and totally 2.85mW is consumed.