GaN based Super HFETs over 700V using the polarization junction concept

Abstract

GaN Super Heterojunction Field Effect Transistors (Super HFETs) based on the polarization junction (PJ) concept are demonstrated on Sapphire substrates. These Super HFETs were fabricated from a GaN/Al0.23Ga0.77N/GaN hetero structure with 2D hole and electron gas densities of 1.1×10¹³ and 9.7×10¹² cm⁻² at the respective hetero-interfaces. The Super HFETs show breakdown voltage above 700 V with on-resistances of 15 Ω·mm. In addition, the super HFETs have inherent body diodes and its reverse conducting characteristics are demonstrated.