A GaAs MESFET transient model capable of predicting trap-induced memory effects under complex digital modulation

2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157) Pub Date : 2001-05-20 DOI:10.1109/MWSYM.2001.967016

F. Wang, W. Jemison, J.C.M. Hwangy

引用次数: 3

Abstract

A transient model for GaAs MESFETs is presented that can predict distortion of digitally modulated carrier waveforms due to memory effects induced by both low-frequency dispersion and gate-lag. Experimental and simulated results are presented which demonstrate, for the first time, the successful prediction of these effects for multilevel pulse modulated waveforms.

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一种能够预测复杂数字调制下陷阱诱导记忆效应的GaAs MESFET瞬态模型

提出了一种用于GaAs mesfet的瞬态模型，该模型可以预测由低频色散和门滞后引起的记忆效应引起的数字调制载波畸变。实验和仿真结果首次证明了对多电平脉冲调制波形的这些效应的成功预测。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157)

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