Particle reduction in back end of line plasma-etching process: CFM: Contamination free manufacturing

L. Zou, Alex Vaghese, V. Pai, J. Shearer, S. Skordas
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Abstract

Particle contamination within a plasma-etching chamber causes tool down time in semiconductor manufacturing. The purpose of this work is to investigate the sources of contamination and find an effective solution for Back End of Line (BEOL) processes and improve tool up time. Despite typical maintenance, such as cycling chamber, wiping Electric Static Chuck (ESC) components and replacing chamber consumable parts, particle contamination issue persisted. Contamination analysis and ESC examination suggested etch byproduct redeposition during chuck discharge step as root cause. Modifying the discharge step was found to reduce the particle failure rate from 50% to 7%. This significant improvement confirms redeposition on ESC during discharge step and particle resuspension from ESC surface is the primary source for the particle contamination issue.
粒子减少后端线等离子蚀刻工艺:CFM:无污染制造
在半导体制造中,等离子体蚀刻腔内的粒子污染会导致工具停机时间。这项工作的目的是调查污染的来源,并找到一个有效的解决方案,为后端生产线(BEOL)过程和提高工具的时间。尽管有典型的维护,如循环室,擦拭静电卡盘(ESC)组件和更换室易耗件,颗粒污染问题仍然存在。污染分析和ESC检查表明,在卡盘排放过程中蚀刻副产物的再沉积是根本原因。通过改进出料步骤,颗粒失效率从50%降低到7%。这一显著的改善证实了放电阶段在ESC上的再沉积和ESC表面的颗粒再悬浮是颗粒污染问题的主要来源。
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