Multi-type SRAM Test Structure with an Improved March LR Algorithm

Xinshun Ning, Hong-yong Yang, Mengdi Zhang, Yanji Wang, Ye Zhao, Shushan Qiao
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Abstract

With the high-density integration of chips, the use of multi-type SRAM memory is becoming more and more extensive, which also brings great challenges for the testing of chips. Traditional MBIST is usually also achieved by using EDA tools, which makes it difficult to test multi-type memory directly. In this paper, a two-layer FSM PMBIST test structure is proposed, with the outer FSM controls to cut the effective address and data, which can realise the efficient testing of multi-type memory, and the inner FSM combines LFSR and integrates the improved March LR algorithm, which can achieve 100% coverage of the static dual-cell coupling faults. Finally, the simulation of the 55nm process verifies the normal function and good performance of the test structure.
基于改进March LR算法的多类型SRAM测试结构
随着芯片的高密度集成化,多类型SRAM存储器的使用越来越广泛,这也给芯片的测试带来了很大的挑战。传统的MBIST通常也是通过EDA工具来实现的,这给直接测试多类型存储器带来了困难。本文提出了一种两层FSM PMBIST测试结构,外层FSM控制有效地址和数据的切割,可实现多类型存储器的高效测试,内部FSM结合LFSR并集成改进的March LR算法,可实现静态双单元耦合故障的100%覆盖率。最后,对55nm工艺进行了仿真,验证了测试结构功能正常,性能良好。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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