A Kinetic Monte Carlo study on the dynamic switching properties of electrochemical metallization RRAMs during the SET process

Abstract

In this paper, a simulation process based on Kinetic Monte Carlo (KMC) for an electrochemical metallization (ECM) resistive RAM (RRAM) is demonstrated. This simulation tool can investigate all the major dynamics properties of such devices. In particular, the voltage sweep rate dependent I–V characteristics, the variations of SET voltage, writing speed, on-state resistance, filament overgrowth phenomena and the effect of material properties are studied.