Characterization of on-chip capacitance effects for I/O circuits and core circuits

IEEE 10th Topical Meeting on Electrical Performance of Electronic Packaging (Cat. No. 01TH8565) Pub Date : 2001-10-29 DOI:10.1109/EPEP.2001.967614

T. Sudo, K. Nakano, J. Kudo, S. Haga

引用次数: 10

Abstract

This paper presents experimental results for two types of CMOS VLSI test chips that were with and without on-chip capacitance. Radiated emission and simultaneous switching were characterized by activating I/O circuits or core logic circuits.

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片上电容对I/O电路和核心电路的影响

本文介绍了两种CMOS VLSI测试芯片在片上电容和片上电容两种情况下的实验结果。辐射发射和同步开关的特征是激活I/O电路或核心逻辑电路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE 10th Topical Meeting on Electrical Performance of Electronic Packaging (Cat. No. 01TH8565)

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