The simulation of charge transport phenomena in heterostructures

Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289) Pub Date : 1999-09-21 DOI:10.1109/MIAME.1999.827845

E. A. Makarov, A. Sychev

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Abstract

A program for modeling structures containing sharp and smooth heterojunctions is created. The account in the program is conducted in view of Fermi-Dirac statistics. Diffusion and carrier charge drift are taken into account. With the help of this program the HEMT structure was simulated and the I-V characteristics of this structure were designed.

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异质结构中电荷输运现象的模拟

创建了一个包含尖锐和光滑异质结的结构建模程序。程序中的计算是根据费米-狄拉克统计进行的。考虑了扩散和载流子电荷漂移。利用该程序对HEMT结构进行了仿真，并设计了该结构的I-V特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289)

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