Packaging-compatible microtransformers on a silicon substrate

J.Y. Park, H. K. Hong, J. Bu
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引用次数: 1

Abstract

Surface micromachining techniques are utilized to realize microtransformers for being integrated with a multi-chip package, allowing compact integration with chips, sensors, and other components. Two different microtransformers with two-layer vertically stacked spiral-type copper conductor lines and permalloy magnetic cores have been designed and fabricated. Low temperature processes are only chosen for fabricating these microtransformers. The fabricated microtransformers have been tested and compared for finding out better geometries for microtransformers. Electroplated thick permalloy cores and copper coils are utilized for obtaining better performance characteristics in the intermediate frequency range. The fabricated microtransformer has a turn ratio of 1, coupling coefficient of 0.85, dc resistance of 3.3 ohms, and gain characteristics of -5 dB, respectively. These devices have high current capability (up to 2A steady DC current) and are suitable for low power converter applications.
硅衬底上的封装兼容微变压器
表面微加工技术被用于实现与多芯片封装集成的微变压器,允许与芯片,传感器和其他组件紧密集成。设计并制作了两种不同的两层垂直堆叠螺旋型铜导体线和坡莫合金磁芯的微互感器。低温工艺只适用于制造这些微型变压器。为了找出更好的微变压器几何形状,对所制备的微变压器进行了测试和比较。为了在中频范围内获得更好的性能特性,采用了电镀厚坡莫合金铁芯和铜线圈。该微变压器的匝比为1,耦合系数为0.85,直流电阻为3.3欧姆,增益特性为-5 dB。这些器件具有高电流能力(高达2A稳定直流电流),适用于低功率转换器应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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