Degradation of sub-micron gate AlGaN/GaN HEMTs due to reverse gate bias

E. Douglas, Chih-Yang Chang, T. Anderson, J. Hite, Liu Lu, C. Lo, B. Chu, D. Cheney, B. Gila, F. Ren, G. Via, P. Whiting, R. Holzworth, K. Jones, Soohwan Jang, S. Pearton
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引用次数: 6

Abstract

GaN High Electron mobility transistors (HEMTs) were electrically step-stressed under high reverse gate bias conditions. Once a threshold voltage is reached, gate current increases about two orders of magnitude. Though critical voltage was determined to be linear with increasing gate length, electrical simulations show that the maximum electric field was similar at the critical voltage (∼2 MV.cm−1). Electroluminescence and photoluminescence performed on the degraded samples exhibited a decrease in intensity along the periphery of the gate. Transmission electron microscopy shows a thin native oxide layer present under that gate before stressing, and the first stages of gate metal reacting with the underlying AlGaN after stressing.
反栅偏压对亚微米栅极AlGaN/GaN hemt降解的影响
氮化镓高电子迁移率晶体管(hemt)在高反向栅极偏置条件下进行电阶梯应力。一旦达到阈值电压,栅极电流增加大约两个数量级。虽然临界电压随栅极长度的增加呈线性关系,但电学模拟表明,在临界电压(~ 2 MV.cm−1)下,最大电场是相似的。在降解样品上进行的电致发光和光致发光显示出沿栅极外围的强度降低。透射电镜显示,在施加应力之前,栅极下存在一层薄薄的天然氧化层,而在施加应力后,栅极金属与下面的AlGaN发生了第一阶段的反应。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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