Comparative Study of Total Ionizing Dose Effects on the Silicon-Controlled Rectifier Devices for HV and LV ESD Protections

Abstract

In this paper, the total ionizing dose (TID) effects on low voltage triggering silicon controlled rectifier (LVTSCR) and LDMOS-SCR are studied for low voltage (LV) and high voltage (HV) ESD protections, respectively. They are fabricated in a 5V/24V 0.5-μm CDMOS process and exposed to 60Co gamma rays up to 200 krad(Si). The transmission line pulse (TLP) tests are performed before and after irradiation, and then the ESD performances are compared and discussed.