Simulation of thermal oxidation: a three-dimensional finite element approach

Abstract

In this paper, a new numerical model for the three-dimensional simulation of thermal oxidation of silicon is presented. The model takes into account that the diffusion of oxidants, the chemical reaction, and the volume increase occur simultaneously in a so-called reactive layer. This reactive layer has a spatial finite width, in contrast to the sharp interface between silicon and silicon dioxide in the conventional formulation. The oxidation process is numerically described with a coupled system of equations for reaction, diffusion, and displacement. In order to solve the numerical formulation of the oxidation process, the finite element scheme is applied.