Full Field, ArF Immersion Projection Tool

S. Owa, K. Shiraishi, S. Nagaoka, T. Fujiwara, Y. Ishii
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引用次数: 1

Abstract

Immersion lithography is rapidly approaching the manufacturing phase. A production-quality exposure tool system with NA = 1.07 (Nikon NSR-S609B) was constructed to target the start of immersion lithography for IC manufacturing in 2006. Its projection optics has very small wave-front aberration and lowest local flare levels. The overlay issue has been analyzed, and its cause was found to be evaporation cooling. With the tandem stage and local fill nozzle implemented in the S609B, we have successfully avoided the evaporation cooling so that the good wet-to-dry mix-and-match overlay data have been obtained. The major part of immersion specific defects is caused by dried water-droplets, i.e. water-marks. The local fill nozzle has eliminated this defectivity by avoiding airflow in the nozzle. In the future, water immersion with NA = 1.30 optics will be used for half-pitch 45 nm manufacturing
全领域,ArF沉浸投影工具
浸没式光刻技术正迅速进入制造阶段。针对2006年开始的集成电路制造浸入式光刻技术,构建了NA = 1.07(尼康NSR-S609B)的生产质量曝光工具系统。它的投影光学具有非常小的波前像差和最低的局部耀斑水平。对覆层问题进行了分析,发现其原因是蒸发冷却。通过在S609B上实施串联级和局部填充喷嘴,我们成功地避免了蒸发冷却,从而获得了良好的干湿混合匹配覆盖数据。浸渍专用缺陷的主要部分是由干燥的水滴,即水印引起的。局部填充喷嘴通过避免喷嘴内的气流消除了这一缺陷。未来,NA = 1.30的水浸光学将用于半间距45纳米制造
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