CoSi/sub 2//Si Schottky junction formed by high flux metal ion implantation

Abstract

In this paper we present the research of forming CoSi/sub 2//Si Schottky barrier through a novel technology - the metal ion implantation. The electronic characteristics including I-V and C-V characteristics were investigated for the first time. In implantation parameters: dose 3/spl times/10/sup 17/ion/cm/sup 2/ Co; energy, 20kV. After implantation the wafers were annealed for 1 minute at 850/spl deg/C by rapid thermal annealing (RTA). I-V results show that barrier height is 0.64eV and ideality factor is 1.11. The barrier height extracted from C-V results is 0.72eV. Improvements for this new technique are needed.