AH-JFET Amplifiers For Low Noise Applications

W. Buttler, B. Hosticka
{"title":"AH-JFET Amplifiers For Low Noise Applications","authors":"W. Buttler, B. Hosticka","doi":"10.1109/ESSCIRC.1989.5468140","DOIUrl":null,"url":null,"abstract":"In this contribution we present amplifiersfor low noise applications. They have been designed using only N- and P-channel CMOS-compatible junction field effect transistors (JFET) for biasing, amplification, and switching. Using these components a very low noise amplifier system was integrated which consists of a charge sensitive preamplifier and an SC noise filter. Since all active components in this circuit are made of CMOS-compatible JFET's, the amplifier system is also radiation hardened.","PeriodicalId":187183,"journal":{"name":"ESSCIRC '89: Proceedings of the 15th European Solid-State Circuits Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC '89: Proceedings of the 15th European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.1989.5468140","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

In this contribution we present amplifiersfor low noise applications. They have been designed using only N- and P-channel CMOS-compatible junction field effect transistors (JFET) for biasing, amplification, and switching. Using these components a very low noise amplifier system was integrated which consists of a charge sensitive preamplifier and an SC noise filter. Since all active components in this circuit are made of CMOS-compatible JFET's, the amplifier system is also radiation hardened.
用于低噪声应用的AH-JFET放大器
在这篇文章中,我们介绍了用于低噪声应用的放大器。它们仅使用N沟道和p沟道cmos兼容结场效应晶体管(JFET)进行偏置、放大和开关设计。利用这些元件集成了一个极低噪声放大器系统,该系统由电荷敏感前置放大器和SC噪声滤波器组成。由于该电路中的所有有源元件都由cmos兼容的JFET制成,因此放大器系统也具有辐射硬化性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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