Gate turn-off thyristor on the basis of the SDB-technique

Abstract

Silicon Direct Bonding (SDB) technique has been used for designing GTO with a double-layer p-base in which a net of highly doped stripes was made at the interface between the two p-type layers. The device provides a-higher (by an order of magnitude or more) emitter blocking voltage and a lower (nearly 5 times) p-base tangential resistance than in the conventional GTO. This allows one to control a large operating area, to simplify the technology and improve the heat removal. The device has good static and dynamic characteristics with abrupt main current and control current breakage during the turn-off process in contrast to the conventional GTO.