An ultra-small isolation area for 600V class reverse blocking IGBT with deep trench isolation process (TI-RB-IGBT)

Abstract

We developed a 600 V class trench isolation RB-IGBT (TI-RB-IGBT), whose termination area is extremely small in comparison with other isolation techniques, such as diffusion isolation or silicon mesa etching. The TI area is not only very small but also almost identical for all the blocking voltage classes. Our fabricated 100 A class TI-RB-IGBT, with one micron rule planar gate structure, has more than 600 V blocking capability for both directions, and its trade-off relationship between the forward voltage drop Vce(sat) and the turn-off energy loss Eoff is slightly better than our previous punch through (PT) type third generation planar gated IGBT, even though it has an n-body and the backside collector structure is of the NPT type.