Testing Crosstalk Faults of Data and Address Buses in Embedded RAMs

Jiunn-Der Yu, Jin-Fu Li, Tsu-Wei Tseng
{"title":"Testing Crosstalk Faults of Data and Address Buses in Embedded RAMs","authors":"Jiunn-Der Yu, Jin-Fu Li, Tsu-Wei Tseng","doi":"10.1109/VDAT.2007.373218","DOIUrl":null,"url":null,"abstract":"Random access memories (RAMs) have many long parallel wires which incur a greater probability for excessive crosstalk coupling effect. This paper presents a test algorithm for detecting crosstalk faults of address and data buses in RAMs. The test algorithm requires 12n+2m+2 Read/Write operations to cover 100% crosstalk faults for a RAM with m-bit addresses, n-bit data inputs/outputs. A BIST supporting March-CW and the proposed test is also implemented. Experimental results show that the area cost of the BIST is only about 3.1% for an 8 Ktimes16-bit RAM based on TSMC 0.18 mum standard cell library.","PeriodicalId":137915,"journal":{"name":"2007 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VDAT.2007.373218","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Random access memories (RAMs) have many long parallel wires which incur a greater probability for excessive crosstalk coupling effect. This paper presents a test algorithm for detecting crosstalk faults of address and data buses in RAMs. The test algorithm requires 12n+2m+2 Read/Write operations to cover 100% crosstalk faults for a RAM with m-bit addresses, n-bit data inputs/outputs. A BIST supporting March-CW and the proposed test is also implemented. Experimental results show that the area cost of the BIST is only about 3.1% for an 8 Ktimes16-bit RAM based on TSMC 0.18 mum standard cell library.
嵌入式ram中数据和地址总线串扰故障的测试
随机存储器(ram)具有许多长的平行导线,这使得其产生过多串扰耦合效应的可能性较大。提出了一种检测ram中地址和数据总线串扰故障的测试算法。对于m位地址、n位数据输入/输出的RAM,测试算法需要12n+2m+2个读/写操作来覆盖100%的串扰故障。同时还实现了一个支持March-CW和提议测试的BIST。实验结果表明,基于台积电0.18 mum标准单元库的8 ktimes 16位RAM的面积成本仅为3.1%左右。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信