Chromium Nitride Coating by Inductively Coupled Plasma-assisted RF Magnetron Sputtering

Ho-sung Jang, Yu-sung Kim, Dae-Jam Choi, Jae-Young Lee, Jihong Park, Jong-In Choi, B. Choi, Y. You, H. Chun, D. Kim
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引用次数: 1

Abstract

Chromium nitride (CrN) films were deposited by using inductively coupled plasma (ICP) assisted RF magnetron sputtering to investigate the effect of substrate bias voltage on the hardness, surface morphology roughness, and crystalline growth on Si(100) substrate. As increasing substrate bias voltage (Vb), surface hardness increased from 5 to 15 GPa. The grain size also increased proportionally as increasing Vb from -30 to -80, while beyond -80 Vb, the grain size was deteriorated by an intense N+ion bombardment.
电感耦合等离子体辅助射频磁控溅射镀氮化铬
采用电感耦合等离子体(ICP)辅助射频磁控溅射技术沉积氮化铬(CrN)薄膜,研究衬底偏置电压对Si(100)衬底硬度、表面形貌粗糙度和晶体生长的影响。随着衬底偏置电压(Vb)的增加,表面硬度从5增加到15 GPa。在-30 ~ -80 Vb范围内,随着Vb的增大晶粒尺寸呈比例增大,而在-80 Vb范围内,晶粒尺寸受到强烈的N+离子轰击而恶化。
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