Study on the Direct Relationship between Macroscopic Electrical Parameters and Microscopic Channel Percolative Properties in Nanoscale MOSFETs

Abstract

In this paper, based on the quantitatively characterized factor of channel current percolation path (PP), the local current fluctuations characteristics in device channel can be directly determined by I-V curves only, which links the microscopic PPs to macroscopic device electrical parameters. The results indicate that the newly-defined “killer ratio” of PP is highly correlated with subthreshold swing degradation rate in both planar devices and FinFETs. It is also found that the current in PP area increases slower with V_{g} than the current in non-PP area, which is verified through TCAD and SPICE simulations. The explanation of the physical nature of correlated behavior sheds new light on understanding statistical variability and reliability in nanoscale devices.