A 5V-only 16M flash memory using a contactless array of source-side injection cells

Abstract

The source side injection technology coupled with a modified virtual ground contactless array architecture is effective in addressing high density FLASH requirements. We describe a single supply 16 Mbit chip developed in a 0.7 /spl mu/m triple-poly double metal process using a 3.36 /spl mu/m/sup 2/ cell. The design challenge is to implement all the necessary array interface circuitry while maintaining a high array-to-chip area efficiency. This implementation requires unique decoding circuitry on the bitlines and cell control gates.