32Kb Innovative fuse (I-Fuse) array in 22nm FD-SOI with 0.9V/1.4mA program voltage/current and 0.744um2 cell

Abstract

I-fuse is a revolutionary OTP programmed below an on-set of thermal runaway and above electromigration (EM) threshold. On 22nm FD-SOI, the 1R1T I-fuse has a 0.744um2 cell and 0.0312mm2 32Kb array with program voltage ranging from 0.9 V to 1.4 V. The whole array does not require high voltage circuits or charge pumps. The cell current distributions for data 0 and 1 are very tight and have large separation in between that can be sensed easily. The first cut design has been qualified at 150oC for 1,000 hours with very small cell current variations.