New industry standard FinFET compact model for future technology nodes

Abstract

A new production ready compact model for future FinFETs is presented. This single unified model can model FinFETs with realistic fin shapes including rectangle, triangle, circle and any shape in between. New mobility models support Ge p-FinFETs and InGaAs n-FinFETs. A new quantum effects model enables accurate modeling of III-V FinFETs. Special attention is paid to shape agnostic short-channel effect model for aggressive Lg scaling and body bias model for FinFETs on bulk substrates. With its accuracy verified with experimental data and TCAD, this computationally efficient model is an ideal turn-key solution for simulation and design of future heterogeneous circuits.