{"title":"High sensitive mass detection in liquid using a piezoelectric GaAs membrane","authors":"A. Bienaimé, C. Élie-Caille, T. Leblois","doi":"10.1109/TRANSDUCERS.2013.6626707","DOIUrl":null,"url":null,"abstract":"In this study, we developed a specific GaAs acoustic sensor adapted for molecules detection in biological media. The design was performed taking in mind that the device will be in contact with liquid. The resonant structure is a membrane. Microfabrication processes based on anisotropic chemical etching were used to obtain the right structure. The best performance was obtained in a (100) wafer with an electric field aligned along <;110> direction. For a membrane thickness of 50 μm, fR is close to 33.36 Mhz and the sensitivity is higher than for QCM and is similar to the values obtained using SPR techniques.","PeriodicalId":202479,"journal":{"name":"2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TRANSDUCERS.2013.6626707","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this study, we developed a specific GaAs acoustic sensor adapted for molecules detection in biological media. The design was performed taking in mind that the device will be in contact with liquid. The resonant structure is a membrane. Microfabrication processes based on anisotropic chemical etching were used to obtain the right structure. The best performance was obtained in a (100) wafer with an electric field aligned along <;110> direction. For a membrane thickness of 50 μm, fR is close to 33.36 Mhz and the sensitivity is higher than for QCM and is similar to the values obtained using SPR techniques.