F. Zappa, S. Tisa, A. Gulinatti, A. Gallivanoni, S. Cova
{"title":"Monolithic CMOS detector module for photon counting and picosecond timing","authors":"F. Zappa, S. Tisa, A. Gulinatti, A. Gallivanoni, S. Cova","doi":"10.1109/ESSDER.2004.1356559","DOIUrl":null,"url":null,"abstract":"A monolithic optoelectronic module for counting and timing single optical photons has been designed and fabricated in CMOS technology. It integrates a single-photon avalanche diode (SPAD) of 12 /spl mu/m-diameter with a complete active-quenching and active-reset circuit. The detector operates in Geiger-mode biased above breakdown level, with overvoltage adjustable up to 20 V. The on-chip electronics detects the rise of the current triggered by a photogenerated carrier, then swiftly quenches the avalanche by controlling the SPAD bias voltage, and finally resets the detector after a hold-off time (adjustable from 0 to 350 ns). In a chip of 700 /spl mu/m/spl times/1,000 /spl mu/m, the overall performance is comparable or better than that of macroscopic modules available from leading industries.","PeriodicalId":287103,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)","volume":"158 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"34","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDER.2004.1356559","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 34
Abstract
A monolithic optoelectronic module for counting and timing single optical photons has been designed and fabricated in CMOS technology. It integrates a single-photon avalanche diode (SPAD) of 12 /spl mu/m-diameter with a complete active-quenching and active-reset circuit. The detector operates in Geiger-mode biased above breakdown level, with overvoltage adjustable up to 20 V. The on-chip electronics detects the rise of the current triggered by a photogenerated carrier, then swiftly quenches the avalanche by controlling the SPAD bias voltage, and finally resets the detector after a hold-off time (adjustable from 0 to 350 ns). In a chip of 700 /spl mu/m/spl times/1,000 /spl mu/m, the overall performance is comparable or better than that of macroscopic modules available from leading industries.