Physical layer design of a 1.6 GB/s DRAM bus

Abstract

This paper describes an innovative design and modeling methodology for development of a high performance memory bus with data signaling bandwidth of up to 1.6 gigabytes per second. Data signals operate at 800 megabits per second transfer rate. The clock frequency is 400 MHz and the signal edge transition time is 200 ps. Due to the extremely high frequencies involved, overall system electrical performance must be optimized. By following the methodology outlined in this paper, good correlation was obtained between simulated and measured results.