Modeling the substrate effect of RF MOSFET’s based on four-port measurement

Abstract

In this paper, several 0.13 μm RF NMOSFET's were characterized by 4-port s-parameter measurement and the parameters of the small-signal equivalent circuit model of the RF MOSFET's were extracted from the 4-port measurement data directly. The frequency range of 4-port measurement is extended from 200 MHz to 20 GHz. While all parameters of the small-signal equivalent circuit model were extracted, the simulated and measured data were compared and found that they agreed with each other within the entire measurement frequency range.