{"title":"Influence of stress-induced void formation on electromigration endurance in quarter-micron aluminum interconnects","authors":"N. Matsunaga, H. Shibata, K. Hashimoto","doi":"10.1109/VLSIT.1992.200652","DOIUrl":null,"url":null,"abstract":"A study to characterize the electromigration behavior in quarter-micron lines is discussed. An increase of activation energy (E/sub a/) with reduction of line width has been experimentally observed. It was also found that there is a region where the lifetime degrades in spite of an increase in E/sub a/ as line width is reduced. This degradation is caused by current crowding and joule-heating around voids that exist before current stressing. According to the electromigration model, a larger grain size and higher","PeriodicalId":404756,"journal":{"name":"1992 Symposium on VLSI Technology Digest of Technical Papers","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 Symposium on VLSI Technology Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1992.200652","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A study to characterize the electromigration behavior in quarter-micron lines is discussed. An increase of activation energy (E/sub a/) with reduction of line width has been experimentally observed. It was also found that there is a region where the lifetime degrades in spite of an increase in E/sub a/ as line width is reduced. This degradation is caused by current crowding and joule-heating around voids that exist before current stressing. According to the electromigration model, a larger grain size and higher