Low thermal resistance AlN PGA with low inductance of power lines

A. Tanaka, M. Okamoto, M. Oohashi, H. Arakawa, K. Yamada
{"title":"Low thermal resistance AlN PGA with low inductance of power lines","authors":"A. Tanaka, M. Okamoto, M. Oohashi, H. Arakawa, K. Yamada","doi":"10.1109/ECTC.1990.122210","DOIUrl":null,"url":null,"abstract":"A low-thermal-resistance and high-speed pin-grid-array (PGA) package with low-inductance power lines was proposed, and its feasibility was confirmed. To obtain low-inductance power lines, the wiring system in the package kept power-line layers and signal-line layers separate. Low inductance of power lines was realized by using conductive layers with a large area in an aluminium nitride (AlN) substrate and arranging the power pins just under the silicon chips. A high signal-propagation speed was realized by sandwiching radial signal lines between low-dielectric-constant polyimide layers. To obtain low thermal resistance, a silicon chip was soldered onto the metallized AlN ceramic substrate. High thermal conductivity of AlN ceramics and the arrangement of pins on the AlN substrate surface opposite the side of the silicon chip resulted in low thermal resistance of the package. The package on the printed wiring board had a thermal resistance of 3.0 degrees C/W at an air velocity of 1 m/s using a 14-mm-high aluminium cooling heat sink. The self-inductance of the power lines was 1.4 nH in the package substrate without pins and bonding wires.<<ETX>>","PeriodicalId":102875,"journal":{"name":"40th Conference Proceedings on Electronic Components and Technology","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"40th Conference Proceedings on Electronic Components and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.1990.122210","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

A low-thermal-resistance and high-speed pin-grid-array (PGA) package with low-inductance power lines was proposed, and its feasibility was confirmed. To obtain low-inductance power lines, the wiring system in the package kept power-line layers and signal-line layers separate. Low inductance of power lines was realized by using conductive layers with a large area in an aluminium nitride (AlN) substrate and arranging the power pins just under the silicon chips. A high signal-propagation speed was realized by sandwiching radial signal lines between low-dielectric-constant polyimide layers. To obtain low thermal resistance, a silicon chip was soldered onto the metallized AlN ceramic substrate. High thermal conductivity of AlN ceramics and the arrangement of pins on the AlN substrate surface opposite the side of the silicon chip resulted in low thermal resistance of the package. The package on the printed wiring board had a thermal resistance of 3.0 degrees C/W at an air velocity of 1 m/s using a 14-mm-high aluminium cooling heat sink. The self-inductance of the power lines was 1.4 nH in the package substrate without pins and bonding wires.<>
低热阻AlN PGA,具有低电力线电感
提出了一种基于低电感电力线的低热阻高速针栅阵列封装方案,并对其可行性进行了验证。为了获得低电感的电源线,封装中的布线系统将电力线层和信号线层分开。在氮化铝(AlN)衬底上采用大面积导电层,并将电源引脚布置在硅芯片的正下方,实现了电力线的低电感。通过将径向信号线夹在低介电常数聚酰亚胺层之间,实现了高的信号传播速度。为了获得低热阻,硅片被焊接在金属化AlN陶瓷衬底上。AlN陶瓷的高导热性以及在与硅芯片侧面相对的AlN衬底表面上的引脚排列导致了封装的低热阻。采用14mm高的铝冷却散热器,在1m /s的风速下,印刷线路板上的封装具有3.0℃/W的热阻。在没有引脚和搭接线的封装基板中,电源线的自感系数为1.4 nH。
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CiteScore
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