Electrical and optical response of depleting carrier in active PIN silicon waveguide

Abstract

Change in refractive index and corresponding change in optical properties like propagation loss, group index and dispersion in active PIN silicon waveguide with and without photonic crystal core are investigated by changing doping concentration. This investigation sets a bound on doping density which is utilized to change effective refractive index for various applications like modulation, switching, dispersion compensation, slowing light and so on. Influences of depleting carriers on junction capacitance and reverse current behaviors are also investigated for same waveguides. This sets a benchmark for the design and selection of appropriate waveguide for various applications in silicon photonics platform.