S. A. Dvoretskiy, A. Zverev, Yu. S. Makarov, E. Mikhantiev
{"title":"High speed low power 384×288 readout integrated circuit for MWIR and LWIR MCT based FPA","authors":"S. A. Dvoretskiy, A. Zverev, Yu. S. Makarov, E. Mikhantiev","doi":"10.1109/EDM.2015.7184549","DOIUrl":null,"url":null,"abstract":"The review of architecture and characteristics of developed 384×288 silicon readout integrated circuit with 25 μm pixel pitch for MWIR and LWIR MCT based FPA is presented. The main characteristics of the ROIC: pixel cell electron capacity > 21 Me-, maximum output pixel rate per one video output 20 MHz, maximum dissipation power <; 100 mW.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDM.2015.7184549","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The review of architecture and characteristics of developed 384×288 silicon readout integrated circuit with 25 μm pixel pitch for MWIR and LWIR MCT based FPA is presented. The main characteristics of the ROIC: pixel cell electron capacity > 21 Me-, maximum output pixel rate per one video output 20 MHz, maximum dissipation power <; 100 mW.